byg10 document number 86008 rev. 1.6, 15-sep-04 vishay semiconductors www.vishay.com 1 do-214ac (sma) standard avalanche sinterglass diode features ? controlled avalanche characteristics glass passivated junction low reverse current high surge current capability wave and reflow solderable applications surface mounting general purpose rectifier parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part type differentiation package byg10d v r = 200 v @ i fav = 1.5 a do-214ac byg10g v r = 400 v @ i fav = 1.5 a do-214ac byg10j v r = 600 v @ i fav = 1.5 a do-214ac byg10k v r = 800 v @ i fav = 1.5 a do-214ac byg10m v r = 1000 v @ i fav = 1.5 a do-214ac parameter test condition part symbol value unit reverse voltage = repetitive peak reverse voltage byg10d v r = v rrm 200 v byg10g v r = v rrm 400 v byg10j v r = v rrm 600 v byg10k v r = v rrm 800 v byg10m v r = v rrm 1000 v peak forward surge current t p = 10 ms, half sinewave i fsm 30 a average forward current i fav 1.5 a junction and storage temperature range t j = t stg - 55 to + 150 c pulse energy in avalanche mode, non repetitive (inductive load switch off) i (br)r = 1 a, t j = 25 c byg10d- byg10m e r 20 mj
www.vishay.com 2 document number 86008 rev. 1.6, 15-sep-04 byg10 vishay semiconductors maximum thermal resistance t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics (tamb = 25 c unless other wise specified) parameter test condition part symbol value unit junction lead t l = const. r thjl 25 k/w junction ambient mounted on epoxy-glass hard tissue r thja 150 k/w mounted on epoxy-glass hard tissue, 50 mm 2 35 m cu r thja 125 k/w mounted on al-oxid-ceramic (al 2 o 3 ), 50 mm 2 35 m cu r thja 100 k/w parameter test condition part symbol min typ. max unit forward voltage i f = 1 a v f 1.1 v i f = 1.5 a v f 1.15 v reverse current v r = v rrm i r 1 a v r = v rrm , t j = 100 c i r 10 a reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr 4 s figure 1. forward current vs. forward voltage i ? forward current ( a) 0.001 0.010 0.100 1.000 10.000 100.000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v f ? forward voltage ( v ) 16438 f t j =25 c t j =150 c figure 2. max. average forward current vs. ambient temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100 120 140 160 t amb ? ambient temperature ( c ) 16439 i ? average forward current ( a ) fav v r =v rrm half sinewave r thja 25k/w r thja 125k/w r thja 150k/w
byg10 document number 86008 rev. 1.6, 15-sep-04 vishay semiconductors www.vishay.com 3 figure 3. reverse current vs. junction temperature figure 4. max. reverse power dissipation vs. junction temperature figure 5. diode capacitance vs. reverse voltage 1 10 100 1000 25 50 75 100 125 150 t j ? junction temperature ( c ) 16440 v r = v rrm i ? reverse current ( a ) r 0 50 100 150 200 250 300 350 400 25 50 75 100 125 150 t j ? junction temperature ( c ) 16441 v r = v rrm p ? reverse power dissipation ( mw ) r p r ?limit @100%v r p r ?limit @80%v r 0 5 10 15 20 25 30 0.1 1.0 10.0 100.0 v r ? reverse voltage ( v ) 16442 c ? diode capacitance ( pf ) d f=1mhz figure 6. typ. reverse recovery time vs. forward current figure 7. typ. reverse recovery charge vs. forward current 0 0 1000 2000 3000 4000 5000 94 9544 0.2 0.4 0.6 0.8 t ? reverse recovery time ( ns ) rr i f ? forward current ( a ) 1.0 t amb =100 c t amb =125 c t amb =50 c i r =0.5a, i r =0.125a t amb =25 c t amb =75 c 0 0 400 800 1200 1600 2000 94 9338 q ? reverse recovery charge ( nc ) rr 0.2 0.4 0.6 0.8 i f ? forward current ( a ) 1.0 t amb =75 c t amb =100 c t amb =125 c t amb =50 c i r =0.5a, i r =0.125a t amb =25 c
www.vishay.com 4 document number 86008 rev. 1.6, 15-sep-04 byg10 vishay semiconductors dimensions in inches (millimeters) figure 8. thermal response 1 10 100 1000 z ? thermal resistance for pulse cond. (k/w ) thp t p ? pulse length ( s ) 94 9339 10 ?5 10 ?4 10 ?3 10 ?2 10 ?1 10 0 10 1 10 2 t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t=0.05 t p /t=0.02 t p /t=0.01 single pulse 125k/w dc
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